Surface Mount Schottky Power Rectifier

文件：66.36 Kbytes 页数：4 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier

文件：66.36 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier, Surface Mount, 3.0 A, 20 V

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif • Small Compact Surface Mountable Package with J-Bend Leads\n• Rectangular Package for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• Excellent Ability to Withstand Reverse Avalanche Energy Transients\n• Guardring for Stress ProtectionMechanical Characteristics:\n• Case: Epoxy, Mol;

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安森美半导体

Package：DO-214AB，SMC；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 20V 3A SMC-2

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安森美半导体