40.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

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Silicon Abrupt Tuning Varactor Diodes

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4090G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =90A RDS(ON)

文件：357.83 Kbytes 页数：7 Pages

NCEPOWER

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =90A RDS(ON) =4.2mΩ @ VGS=10V (Typ) RDS(ON) =7.2mΩ @ VGS=4.5V (Typ) ● High density cell

文件：693.26 Kbytes 页数：7 Pages

NCEPOWER

新洁能