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MBRD1035CTL

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

文件:104.04 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRD1035CTL

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

文件:231.35 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MBRD1035CTL

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma

文件:63.87 Kbytes 页数:3 Pages

DIODES

美台半导体

MBRD1035CTL

SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package

SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol

文件:158.19 Kbytes 页数:6 Pages

Motorola

摩托罗拉

MBRD1035CTL_V01

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

文件:231.35 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MBRD1035CTLG

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

文件:231.35 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MBRD1035CTLG

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

文件:120.16 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRD1035CTL-T

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma

文件:63.87 Kbytes 页数:3 Pages

DIODES

美台半导体

MBRD1035CTLT4

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

文件:104.04 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRD1035CTLT4G

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

文件:104.04 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

产品属性

  • 产品编号:

    MBRD1035CTLT4G

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 阵列

  • 系列:

    SWITCHMODE™

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 二极管配置:

    1 对共阴极

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io)(每二极管):

    10A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 工作温度 - 结:

    -55°C ~ 150°C

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 供应商器件封装:

    DPAK

  • 描述:

    DIODE ARRAY SCHOTTKY 35V 5A DPAK

供应商型号品牌批号封装库存备注价格
ON/安森美
23+
NA
7825
原装正品!清仓处理!
询价
ON/安森美
24+
TO-252
12524
原装正品,现货库存,1小时内发货
询价
ONSEMI/安森美
25+
TO-252
32360
ONSEMI/安森美全新特价MBRD1035CTLT4G即刻询购立享优惠#长期有货
询价
ON
SOT-252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
ON
23+
DPAK
56000
询价
ONSemi
2111
TO-252-2(D
27702
全新原装公司现货
询价
ON/安森美
22+
TO-252
12000
原装正品
询价
ON
22+
TO-252
15000
原装优质现货订货渠道商
询价
ON
24+
T0-252
5000
原装现正品可看现货
询价
ON/安森美
2021+
TO-252
9000
原装现货,随时欢迎询价
询价
更多MBRD1035CT供应商 更新时间2026-1-7 17:00:00