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MBRB3030

SWITCHMODE??Power Rectifier

SWITCHMODEPowerRectifier UsingtheSchottkyBarrierprinciplewithaproprietarybarriermetal.Thesestate–of–the–artdeviceshavethefollowingfeatures: •GuardringforStressProtection •MaximumDieSize •150°COperatingJunctionTemperature •ShortHeatSinkTabManufactured–NotSh

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MBRB3030CT

SWITCHMODE??Power Rectifier

SWITCHMODEPowerRectifier UsingtheSchottkyBarrierprinciplewithaproprietarybarriermetal.Thesestate–of–the–artdeviceshavethefollowingfeatures: •GuardringforStressProtection •MaximumDieSize •150°COperatingJunctionTemperature •ShortHeatSinkTabManufactured–NotSh

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MBRB3030CT

SWITCHMODE Power Rectifier

SWITCHMODEPowerRectifier Thesestate−of−the−artdevicesusetheSchottkyBarrierprinciplewithaproprietarybarriermetal. Features •GuardringforStressProtection •MaximumDieSize •175°COperatingJunctionTemperature •ShortHeatSinkTabManufactured−NotSheared •Pb−FreePack

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB3030CT

Schottky Barrier Rectifier

FEATURES •Schottkybarrierchip •LowPowerLoss,HighEfficiency •Guardringfortransientprotection •HighOperatingJunctionTemperature •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Foruseinhighfrequency

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MBRB3030CT

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guardringforovervoltageprotection.

DSK

Diode Semiconductor Korea

MBRB3030CT

30 Amp Schottky Barrier Rectifier 30 to 60 Volts

Features •Guardringfortransientprotection •LowForwardVoltageDrop •HighCurrentCapability,HighEfficiency •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Marking:typenumber •LeadFreeFin

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MBRB3030CTG

SWITCHMODE Power Rectifier

SWITCHMODEPowerRectifier Thesestate−of−the−artdevicesusetheSchottkyBarrierprinciplewithaproprietarybarriermetal. Features •GuardringforStressProtection •MaximumDieSize •175°COperatingJunctionTemperature •ShortHeatSinkTabManufactured−NotSheared •Pb−FreePack

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB3030CTL

SCHOTTKY RECTIFIER

Description/Features ThiscentertapSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Theproprietarybarriertechnologyallowsforreliableoperationupto150°Cjunctiontemperature.Typicalapplicationsareinswitchingpowersupplies,converters

IRF

International Rectifier

MBRB3030CTL

SWITCHMODE Power Rectifier

SWITCHMODEPowerRectifier Thesestate−of−the−artdevicesusetheSchottkyBarrierprinciplewithaproprietarybarriermetal. Features •DualDiodeConstruction,MaybeParalleledforHigherCurrentOutput •Guard−RingforStressProtection •LowForwardVoltageDrop •125°COperatingJunct

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB3030CTL

Schottky Rectifier, 2 x 15 A

DESCRIPTION ThiscentertapSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Theproprietarybarriertechnologyallowsforreliableoperationupto150°Cjunctiontemperature.Typicalapplicationsareinswitchingpowersupplies,converters,freewhe

VishayVishay Siliconix

威世科技威世科技半导体

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Configuration:

    Common Cathode

  • VRRM Min (V):

    30

  • VF Max (V):

    0.67

  • IRM Max (µA):

    600

  • IO(rec) Max (A):

    30

  • IFSM Max (A):

    200

  • Package Type:

    D2PAK-3/TO-263-2

供应商型号品牌批号封装库存备注价格
IR
05+
TO-263
24000
原装进口
询价
ON
2015+
D2PAK3
12500
全新原装,现货库存长期供应
询价
24+
3000
公司现货
询价
ON
2020+
TO-263
2199
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ON
2016+
TO-263
6528
房间原装进口现货假一赔十
询价
ON/IR
23+
TO-263
6893
询价
ON
23+
TO263
5000
原装正品,假一罚十
询价
ON
17+
TO-263
6200
询价
ON/安森美
24+
SOT-263
5000
全现原装公司现货
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多MBRB3030供应商 更新时间2025-7-31 10:31:00