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MBRB2535

25 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features •MeatlofSiliconRectifier,MajorityConducton •Guardringfortransientprotection •LowForwardVoltageDrop •HighCurrentCapability,HighEfficiency •LowPowerLoss

MCCMicro Commercial Components

美微科美微科半导体公司

MBRB2535

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

SMCSintered Metal Company

烧结金属烧结金属公司

MBRB2535CT

25 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features •MeatlofSiliconRectifier,MajorityConducton •Guardringfortransientprotection •LowForwardVoltageDrop •HighCurrentCapability,HighEfficiency •LowPowerLoss

MCCMicro Commercial Components

美微科美微科半导体公司

MBRB2535CT

Dual Schottky Barrier Rectifiers

ReverseVoltage35to60VoltsForwardCurrent25.0Amperes Features ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Dualrectifierconstruction,positivecentertap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,higheffi

Good-Ark

Good-Ark

MBRB2535CT

Dual Common-Cathode Schottky Rectifier

FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-

VishayVishay Siliconix

威世科技

MBRB2535CT

Schottky Rectifier, 2 x 15 A

FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-

VishayVishay Siliconix

威世科技

MBRB2535CT

25A Dual Schottky Rectifiers

PRODUCTSUMMARY Voltageratingsavailablefrom35to60Volts FEATURES •PlasticpackageshaveUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metal-siliconjunction,majoritycarrierconduction •Lowpowerloss,hi

SSC

Silicon Standard Corp.

MBRB2535CT

MBRB2535CT SCHOTTKY RECTIFIER

Features 150℃TJoperation Centertapconfiguration Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability ThisisaPb−Free

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

MBRB2535CT

SCHOTTKY RECTIFIER

FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0 ♦Dualrectifierconstruction,positivecenter-tap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Highcurrentcapability,lowforwardvoltagedrop ♦Highsurg

GE

GE Industrial Company

MBRB2535CTL

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™PowerRectifierD2PAKSurfaceMountPowerPackage TheD2PAKPowerRectifieremploystheSchottkyBarrierprincipleinalargemetal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforus

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB2535CTL

MBRB2535CTL SCHOTTKY RECTIFIER

Features 125℃TJoperation Centertapconfiguration Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability ThisisaPb−Free

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

MBRB2535CTLG

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™PowerRectifierD2PAKSurfaceMountPowerPackage TheD2PAKPowerRectifieremploystheSchottkyBarrierprincipleinalargemetal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforus

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB2535CTLG

SWITCHMODE Power Rectifier

SWITCHMODEPowerRectifierD2PAKSurfaceMountPowerPackage TheD2PAKPowerRectifieremploystheSchottkyBarrierprincipleinalargemetal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforuse

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB2535CTLT4

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™PowerRectifierD2PAKSurfaceMountPowerPackage TheD2PAKPowerRectifieremploystheSchottkyBarrierprincipleinalargemetal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforus

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB2535CTLT4G

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™PowerRectifierD2PAKSurfaceMountPowerPackage TheD2PAKPowerRectifieremploystheSchottkyBarrierprincipleinalargemetal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforus

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB2535CTLT4G

SWITCHMODE Power Rectifier

SWITCHMODEPowerRectifierD2PAKSurfaceMountPowerPackage TheD2PAKPowerRectifieremploystheSchottkyBarrierprincipleinalargemetal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforuse

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB2535CTPBF

SCHOTTKY RECTIFIER

Description/Features ThiscentertapSchottkyrectifierhasbeenoptimizedforlowreverseleakageathightemperature.Theproprietarybarriertechnologyallowsforreliableoperationupto150°Cjunctiontemperature.Typicalapplicationsareinswitchingpowersupplies,converters,free-wheel

IRFInternational Rectifier

英飞凌英飞凌科技公司

MBRB2535CTTRL

Schottky Rectifier, 2 x 15 A

FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-

VishayVishay Siliconix

威世科技

MBRB2535CTTRR

Schottky Rectifier, 2 x 15 A

FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-

VishayVishay Siliconix

威世科技

MBRB2535CT

30 Amp Schottky Barrier Rectifier 20 to 60 Volts

MCCMicro Commercial Components

美微科美微科半导体公司

详细参数

  • 型号:

    MBRB2535

  • 制造商:

    MCC

  • 制造商全称:

    Micro Commercial Components

  • 功能描述:

    25 Amp Schottky Barrier Rectifier 20 to 100 Volts

供应商型号品牌批号封装库存备注价格
IR/ON
TO-263D2PAK
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MOTOROLA
24+25+/26+27+
TO-263-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
ON
23+
TO-220
18000
询价
ON
1436+
TO-263
30000
绝对原装进口现货可开增值税发票
询价
IR
06+
TO-263
24000
原装库存
询价
ON
2015+
D2PAK3
12500
全新原装,现货库存长期供应
询价
20000
询价
ON
11+
525
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
ON
2017+
DO201AD
75000
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ON
2020+
TO-263
20
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多MBRB2535供应商 更新时间2024-5-24 11:09:00