| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MBR16 | Low forward voltage drop 文件:90.64 Kbytes 页数:6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
Schottky Rectifier, 1 A DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea 文件:84.6 Kbytes 页数:5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free 文件:67.47 Kbytes 页数:5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol 文件:120.58 Kbytes 页数:3 Pages | UTC 友顺 | UTC | ||
Axial Lead Rectifiers Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert 文件:95.5 Kbytes 页数:4 Pages | Motorola 摩托罗拉 | Motorola | ||
1.0A Axial Leaded Schottky Barrier Rectifier Diodes Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications 文件:109.14 Kbytes 页数:2 Pages | SUNMATE 森美特 | SUNMATE | ||
Low Reverse Current Features • Low Reverse Current • Low Stored Charge. Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction 文件:144.06 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequenc 文件:60.62 Kbytes 页数:2 Pages | PANJIT 強茂 | PANJIT | ||
SCHOTTKY BARRIER RECTIFIER DIODES FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Pb / RoHS Free 文件:36.79 Kbytes 页数:2 Pages | SYNSEMI | SYNSEMI | ||
1A SCHOTTKY RECTIFIER 1A SCHOTTKY RECTIFIER 文件:203.21 Kbytes 页数:3 Pages | DIGITRON | DIGITRON |
技术参数
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Configuration:
Single
- VRRM Min (V):
60
- VF Max (V):
0.75
- IRM Max (µA):
500
- IO(rec) Max (A):
1
- IFSM Max (A):
25
- Package Type:
Axial Lead-2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
QFN |
18000 |
原厂直接发货进口原装 |
询价 | ||
LT |
23+ |
TO-220 |
5000 |
绝对全新原装!现货!特价!请放心订购! |
询价 | ||
DISCRETE |
50 |
ON |
10300 |
询价 | |||
ON |
24+/25+ |
59 |
原装正品现货库存价优 |
询价 | |||
24+ |
20000 |
询价 | |||||
FAIRCHIL |
2015+ |
TO-220AC |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
ON |
13+ |
DO-41 |
5000 |
原装现货价格有优势量大发货 |
询价 | ||
仙童 |
06+ |
TO-220 |
8000 |
原装库存 |
询价 | ||
gs |
24+ |
550 |
8 |
原装现货假一罚十 |
询价 | ||
ONSEMICONDUCTOR |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 |
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