IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES

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HitachiHitachi Semiconductor

日立日立公司

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

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Motorola

摩托罗拉

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

文件：67.47 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Rectifier, 1 A

DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea

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VishayVishay Siliconix

威世威世科技公司