2M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MLY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

文件：2.18252 Mbytes 页数：36 Pages

RAMXEED

富士通

2M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MLY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

文件：2.18252 Mbytes 页数：36 Pages

RAMXEED

富士通

2M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MLY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

文件：2.18252 Mbytes 页数：36 Pages

RAMXEED

富士通

2M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MLY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

文件：2.18252 Mbytes 页数：36 Pages

RAMXEED

富士通

FeRAM Product List

Fujitsu

富士通

Package：8-SOIC（0.154"，3.90mm 宽）；包装：散装 类别：集成电路（IC） 存储器 描述：IC FRAM 2MBIT SPI 50MHZ 8SOP

Kaga FEI America, Inc.

Package：8-SOIC（0.154"，3.90mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC FRAM 2MBIT SPI 50MHZ 8SOP

Kaga FEI America, Inc.

Package：8-SOIC（0.154"，3.90mm 宽）；包装：散装 类别：集成电路（IC） 存储器 描述：IC FRAM 2MBIT SPI 50MHZ 8SOP

Kaga FEI America, Inc.