1 M Bit (128 K x 8)

DESCRIPTIONS The MB85R1001A is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up ba

文件：1.84156 Mbytes 页数：22 Pages

RAMXEED

富士通

Memory FRAM CMOS 1 M Bit (128 K x 8)

文件：206.52 Kbytes 页数：16 Pages

Fujitsu

富士通

1 M Bit (128 K x 8)

DESCRIPTIONS The MB85R1001A is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up ba

文件：1.84156 Mbytes 页数：22 Pages

RAMXEED

富士通

1 M Bit (128 K 횞 8)

文件：142.47 Kbytes 页数：16 Pages

Fujitsu

富士通

FeRAM (并行接口)

Fujitsu

富士通

Package：48-TFSOP（0.488"，12.40mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC FRAM 1MBIT PARALLEL 48TSOP

Kaga FEI America, Inc.