零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
GaAsSchottkyDiodes | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
2W,806to905MHzUHFPOWERAMPLIFIERS TheRFLine UHFPowerAmplifiers Capableofwidepowerrangecontrolasencounteredinportablecellularradioapplications(30dBtypical). •MHW803–2806–870MHz •Specified7.5VoltCharacteristics RFInputPower=1mW(0dBm) RFOutputPower=2Watts MinimumGain(VControl | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
3-PinMicroprocessorSupervisorCircuitwithOpen-DrainResetOutput GeneralDescription TheMIC803isasingle-voltagesupervisorwithopen-drainresetoutputthatprovidesaccuratepowersupplymonitoringandresetgenerationinmicroprocessor-basedsystems.Thefunctionofthedeviceistoassertaresetsignalifthepowersupplyvoltagedropsbelowthereset | MicrelMicrel Semiconductor 麦瑞半导体 | Micrel | ||
3-PinMicroprocessorSupervisorCircuitwithOpen-DrainResetOutput | MicrelMicrel Semiconductor 麦瑞半导体 | Micrel | ||
SiliconMOSIC ■Features ●Allowingdownsizingofthesetsthroughthereductionofapartscountresultingfromthevoltagestep-uputilizingacoilinsteadofatransformerandemployingthethinsurfacemountingpackage. ●Allowinglowvoltagedrive(adaptabletoasmallandlow-voltagebattery),orVC | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
MonolithicConstructionWithBuilt-inBase-EmitterResistors MonolithicConstructionWithBuilt-inBaseEmitterResistors •HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC •ComplementtoMJE700/701/702/703 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SILICONNPNPOWERDARLINGTONTRANSISTORS DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PlasticDarlingtonComplementarySiliconPowerTransistors ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
COMPLEMENTARYPOWERDARLINGTONTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PlasticDarlingtonComplementarySiliconPowerTransistors Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
POWERTRANSISTORS(4.0A,60-80V,40W) PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •Collector–EmitterBreakdownVoltage—:V(BR)CEO=80V •DCCurrentGain—:hFE=750(Min)@IC=2A •ComplementtoTypeMJE703T APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MAX |
22+ |
SOT-23 |
2250 |
100%全新原装公司现货供应!随时可发货 |
询价 | ||
MAXIM |
2023+ |
SOT-23 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
MAXIM/美信 |
23+ |
SOT-23 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
PANASONIC |
08PB |
90000 |
询价 | ||||
PANASONIC |
23+ |
SOD-323 |
36000 |
原装正品现货 |
询价 | ||
Panasonic |
22+ |
SOD323 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
PANASONIC/松下 |
23+ |
SOD323 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Panasonic |
SOD323 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
PANASONIC/松下 |
22+ |
SOD323 |
50000 |
只做正品原装,假一罚十,欢迎咨询 |
询价 | ||
Panasonic |
06+ |
SOD323 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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