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MGS803

GaAsSchottkyDiodes

MA-COM

M/A-COM Technology Solutions, Inc.

MHW803

2W,806to905MHzUHFPOWERAMPLIFIERS

TheRFLine UHFPowerAmplifiers Capableofwidepowerrangecontrolasencounteredinportablecellularradioapplications(30dBtypical). •MHW803–2806–870MHz •Specified7.5VoltCharacteristics RFInputPower=1mW(0dBm) RFOutputPower=2Watts MinimumGain(VControl

MotorolaMotorola, Inc

摩托罗拉

MIC803

3-PinMicroprocessorSupervisorCircuitwithOpen-DrainResetOutput

GeneralDescription TheMIC803isasingle-voltagesupervisorwithopen-drainresetoutputthatprovidesaccuratepowersupplymonitoringandresetgenerationinmicroprocessor-basedsystems.Thefunctionofthedeviceistoassertaresetsignalifthepowersupplyvoltagedropsbelowthereset

MicrelMicrel Semiconductor

麦瑞半导体

MIC803

3-PinMicroprocessorSupervisorCircuitwithOpen-DrainResetOutput

MicrelMicrel Semiconductor

麦瑞半导体

MIP803

SiliconMOSIC

■Features ●Allowingdownsizingofthesetsthroughthereductionofapartscountresultingfromthevoltagestep-uputilizingacoilinsteadofatransformerandemployingthethinsurfacemountingpackage. ●Allowinglowvoltagedrive(adaptabletoasmallandlow-voltagebattery),orVC

PanasonicPanasonic Corporation

松下松下电器

MJE803

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ​​​​​​​ •HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC •ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJE803

SILICONNPNPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MJE803

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托罗拉

MJE803

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE803

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE803

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE803

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJE803

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJE803

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJE803

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美国中央半导体

MJE803

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

MJE803G

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE803G

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE803T

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MJE803T

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector–EmitterBreakdownVoltage—:V(BR)CEO=80V •DCCurrentGain—:hFE=750(Min)@IC=2A •ComplementtoTypeMJE703T APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
MAX
22+
SOT-23
2250
100%全新原装公司现货供应!随时可发货
询价
MAXIM
2023+
SOT-23
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
MAXIM/美信
23+
SOT-23
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
PANASONIC
08PB
90000
询价
PANASONIC
23+
SOD-323
36000
原装正品现货
询价
Panasonic
22+
SOD323
28600
只做原装正品现货假一赔十一级代理
询价
PANASONIC/松下
23+
SOD323
50000
全新原装正品现货,支持订货
询价
Panasonic
SOD323
68900
原包原标签100%进口原装常备现货!
询价
PANASONIC/松下
22+
SOD323
50000
只做正品原装,假一罚十,欢迎咨询
询价
Panasonic
06+
SOD323
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多MAZ803TUR供应商 更新时间2024-9-26 16:27:00