首页 >MAXZ951>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

MC951

INTEGRATEDCIRCUITS

INTEGRATEDCIRCUITSFROMMOTOROLA MDTLintegratedcircuitsprovideanexcellentbalanceofspeedpowerdissipation,andnoiseimmunityforgeneralpurposedigitalapplications.Thelineincludesmanymultifunctiontypes.AdditionallogicpowerisprovidedbythewiredORcapabilityofthebasicM

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MKF-951

Perfectstoragesolutionsforsystemdesignersandbuilders

KINGSTONKingston Technology Far East Co. Ltd

金士顿金士顿科技

MMBR951

NPNSiliconLowNoise,High-FrequencyTransistors

TheRFLine NPNSiliconLowNoise,High-FrequencyTransistors Designedforuseinhighgain,lownoisesmall–signalamplifiers.Thisseriesfeaturesexcellentbroadbandlinearityandisofferedinavarietyofpackages. •FullyImplantedBaseandEmitterStructure •18Finger,1.25MicronGeom

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MMBR951L

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMBR951L

SiliconNPNRFTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MPC951

LOWVOLTAGEPLLCLOCKDRIVER

LowVoltagePLLClockDriver TheMPC950/951are3.3Vcompatible,PLLbasedclockdriverdevicestargetedforhighperformanceclocktreedesigns.Withoutputfrequenciesofupto180MHzandoutputskewsof375pstheMPC950isidealforthemostdemandingclocktreedesigns.Thedevicesemployaf

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MRF951

NPNSILICONRFTRANSISTOR

DESCRIPTION: TheASIMRF951isDesignedforhighgain.Lownoisesmall-signalamplifiers.Applicationsupto2.0GHz. FEATURES: •LowNoiseFigure •HighGain •Omnigold™MetalizationSystem

ASI

Advanced Semiconductor

MRF951

RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS

DESCRIPTION:Designedforuseinhighgain,lownoisesmall-signalamplifiers. Features •FullyImplantedBaseandEmitterStructure. •HighGain,GainatOptimumNoiseFigure=14dB@1GHz •LowNoiseFigure–1.3dB@1GHz •Ftau-8.0GHz@6v,30mA •CostEffectiveMacroXPackage

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MT951XLSG

Non-isolatedAPFCBUCKLEDDriver

MAXICMaxic Technology,Inc.

美芯晟美芯晟科技(北京)有限公司

N951

Lowvoltagefast-switchingPNPpowertransistor

Description ThedeviceismanufacturedinPNPplanartechnologybyusinga“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancescoupledwithverylowsaturationvoltage. Features ■Verylowcollector-emittersaturationvoltage ■Highcurrentgaincharacterist

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

供应商型号品牌批号封装库存备注价格