首页 >MAX998EUTT>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
ICintendedforuseasaPWMcontroller | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
SiliconN-ChannelMOSFETTetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconN-channeldual-gateMOS-FETs | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconNChannelMOSFETTetrode(Short-channeltransistorwithhighS/CqualityfactorForlow-noise,gain-controlledinputstagesupto1GHz) Features ●Short-channeltransistorwithhighS/Cqualityfactor ●Forlow-noise,gain-controlledinputstagesupto1GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
SiliconN_ChannelMOSFETTetrode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconN-ChannelMOSFETTetrode(Short-channeltransistorwithhighS/Cqualityfactor) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
SiliconN-channeldual-gateMOS-FETs | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconN-ChannelMOSFETTetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SiliconN_ChannelMOSFETTetrode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MXM |
D/C04+ |
134 |
询价 | ||||
maxim |
20+ |
100000 |
全新原装 |
询价 | |||
Maxim |
22+ |
SOT236 |
9000 |
原厂渠道,现货配单 |
询价 | ||
MAXIM |
1215+ |
SOT23-5 |
150000 |
全新原装,绝对正品,公司大量现货供应. |
询价 | ||
MAXIM |
23+ |
SOT23 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
MAXIM |
2021+ |
N/A |
6800 |
只有原装正品 |
询价 | ||
MAXIM |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
询价 | ||
MAXIM |
19+ |
SOT23-6 |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
MAXIM |
22+ |
原廠原封 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
MAX |
23+ |
NA |
8608 |
专做原装正品,假一罚百! |
询价 |
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