首页 >MAX996EUDT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
UsingtheFairchildFSTBusSwitchasa5Vto3VTranslator Introduction FairchildFSTBusSwitchescanbeusedforbi-directionaltranslators.Theycaninterface5Vcomponentsto3Vcomponentswithnegligiblepropagationdelay(tPD≤250ps)andminimalpowerdissipation(ICC≤10µA). Asthenumberofsystemsthatinterfacebetween5Vand3.3Vlevelsinc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-channeldual-gateMOS-FET | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | JMNIC | ||
N-channeldual-gateMOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •RFapplicationssucha | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features ●Integratedgateprotectiondiodes ●Lownoisefigure ●Lowfeedbackcapacitance ●Highcrossmodulationperformance ●Lowinputcapacitance ●HighAGC-range Applications InputandmixerstagesinUHFtuner. | Temic TEMIC Semiconductors | Temic | ||
SiliconNChannelMOSFETTetrode(ForinputstagesinUHFTVtunersHightransconductanceLownoisefigure) SiliconNChannelMOSFETTetrode ●ForinputstagesinUHFTVtuners ●Hightransconductance ●Lownoisefigure | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •RFapplicationssucha | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •RFapplicationssucha | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •RFapplicationssucha | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ATOBladeFuseRated32V | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
ATOBladeFuseRated32V | Littelfuselittelfuse 力特力特公司 | Littelfuse |
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