Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：集成电路（IC） 电压基准 描述：IC VREF SHUNT 1.5% SOT23-3

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This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V driv

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