MID117

TECHNICALSPECIFICATIONSOFPNPDARLINGTONTRANSISTOR

Description Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andamplifiers.

MJD117

EPITAXIALPLANARPNPTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain.:hFE=1000(Min.),VCE=-4V,IC=-1A. •LowCollector-EmitterSaturationVoltage. •StraightLead(IPAK,LSuffix) •ComplementarytoMJD112/L.

MJD117

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Application ■Lin

MJD117

ComplementaryDarlingtonPowerTransistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications

MJD117

D-PAKforSurfaceMountApplications

D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP117

MJD117

ComplementaryDarlingtonPowerTransistors

MJD117

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

MJD117

ComplementarypowerDarlingtontransistors

MJD117

ComplementaryDarlingtonPowerTransistors

MJD117

TRANSISTOR(PNP)