M0020资料使用说明书库存现货诺冠NORGREN-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
M0020	文件：1.44966 Mbytes Page：4 Pages	Pneufit® M PUSH-IN fittings, metric Technicalfeatures Medium: Compressedair Operatingpressure: 10bar(145psi)max. Vacuum: 750mmHg Tubesizes: 3,4,and6mm Threadsizes: M3,M5,M6,R1/8andRc1/8 Tubingtypes: PA11or12 PUR85,95or98durometer Ambient/Mediatemperature: -20°C...+60°C(+32...+140°F)	NORGRENNorgren Ltd 诺冠
M00X	文件：486.27 Kbytes Page：9 Pages	N-Channel 30 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司
M100	文件：92.2 Kbytes Page：2 Pages	MINIATURE PLASTIC SILICON RECTIFIER [GENLINSTR/POWER] MINIATUREPLASTICSILICONRECTIFIER	ETCList of Unclassifed Manufacturers 未分类制造商
M1004204	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040054X0ISAR	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040054X0ISAY	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040054X0IWAR	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040054X0IWAY	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040054X0PSAR	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040054X0PSAY	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040054X0PWAR	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040054X0PWAY	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040108X0ISAR	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040108X0ISAY	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040108X0IWAR	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040108X0IWAY	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040108X0PSAR	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040108X0PSAY	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040108X0PWAR	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M10042040108X0PWAY	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司

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供应商	型号	品牌	批号	封装	库存	备注	价格
艾睿国际（香港）有限公司	M0020P	UBIQ	2021+	1043	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市毅创腾电子科技有限公司	M002-1000	SATCOM	23+	QFP	3500	绝对全新原装!现货!特价!请放心订购!	询价
深圳市特顺芯科技有限公司	M002-1000	SATCOM	04+	QFP	1876		询价
深圳市福安瓯科技有限公司	M002-1000	SATCOM	22+	QFP	2750	福安瓯为您提供真芯库存,真诚服务	询价
上海专毅电子科技有限公司	M002-1000	SATCOM	17+	QFP-44	12000	只做全新进口原装,现货库存	询价
上海意淼电子科技有限公司	M002-1000	ADI	23+	TSOP-16	12000	全新原装假一赔十	询价
深圳市佳鑫美电子科技有限公司	M002-1000	SATCOM	22+	QFP-44	2700	全新原装自家现货优势!	询价
深圳市百视威讯电子科技有限公司	M002-1000		23+	N/A	59810	正品授权货源可靠	询价
深圳赋能华科电子有限公司	M002-1000	SATCOM	22+	QFP	500	样品可出,优势库存欢迎实单	询价
深圳市英卓尔科技有限公司	M002-1000	SATCOM	20+	QFP	500	样品可出,优势库存欢迎实单	询价

更多M_0供应商更新时间2024-4-28 11:00:00

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