QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

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QUAD BUS BUFFER (3-STATE)

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：184.67 Kbytes 页数：10 Pages

STMICROELECTRONICS

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四路总线缓冲器（3态）

The M74HC126 is a high-speed CMOS quad buffer (3-state) fabricated with silicon gate C2MOS technology.\n\n The device requires the 3-state control input, G, to be set high to place the output into high impedance state.\n\n All inputs are equipped with protection circuits against static discharge and • High-speed: tPD = 8 ns (typ.) at VCC = 6 V \n• Low power dissipation: ICC = 4 μA (max.) at TA = 25 °C \n• High noise immunity: VNIH = VNIL = 28 % VCC (min) \n• Symmetrical output impedance: |IOH| = IOL = 6 mA (min.) \n• Balanced propagation delays: tPLH ≅ tPHL \n• Wide operating voltage range:;

ST

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QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFER (3-STATE)

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：184.67 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFER (3-STATE)

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：184.67 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFER (3-STATE)

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：184.67 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体