首页 >M6MGB>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

M6MGB160S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T160S2BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina48-pinTSOP(TYPE-I). FEATURES •Accesstime FlashMemory90ns(Max.) S

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M6MGB160S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T160S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa2097152bytes/1048576words3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOS

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M6MGB162S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T162S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa1048576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyfor

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M6MGB166S2BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T166S2BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M6MGB166S4BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T166S4BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M6MGB331S4BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B

Description TheM6MGB/T331S4BKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand4M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,3.3V-only,andhighperformancenon-volatilememoryfabricated

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

M6MGB331S8AKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

Description TheM6MGB/T331S8AKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand8M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,,singlepowersupplyandhighperformancenon-volatilememory

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

M6MGB162S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M6MGB331S8BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    M6MGB

  • 制造商:

    MITSUBISHI

  • 制造商全称:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    16,777,216-BIT(1,048,576 -WORD BY 16-BIT/2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

供应商型号品牌批号封装库存备注价格
MITSUBISHI
23+
NA
25060
只做进口原装,终端工厂免费送样
询价
MIT
23+
TSSOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
三凌
23+
TSSOP
89630
当天发货全新原装现货
询价
MIT
TSOP48
18
全新原装进口自己库存优势
询价
MIT
17+
TSOP48
9988
只做原装进口,自己库存
询价
MITSUBIS
TSSOP48
6500
一级代理 原装正品假一罚十价格优势长期供货
询价
MIT
23+
TSOP48
20000
全新原装假一赔十
询价
MITSUBISHI
24+
TSSOP52
28500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
MIT
1948+
TSSOP
6852
只做原装正品现货!或订货假一赔十!
询价
23+
TSSOP
11
现货库存
询价
更多M6MGB供应商 更新时间2025-5-22 10:29:00