8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode

DESCRIPTION M63840P/FP/KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES ● High breakdown voltage （BVCEO≧ 4

文件：1.31464 Mbytes 页数：7 Pages

Mitsubishi

三菱电机

晶体管阵列

·晶体管阵列是通过微小电流对大电流进行控制的半导体集成电路。众多的产品系列(50mA~1.5A/35V~50V)广泛应用于各种领域。同时由于采用表面封装技术，使产品的小型化、轻量化和高密度化变为可能。;

MITSUBISHI

三菱电机

8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE

DESCRIPTION M63840P/FP/KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES ● High breakdown voltage （BVCEO≧ 4

文件：281.11 Kbytes 页数：6 Pages

Mitsubishi

三菱电机

8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode

DESCRIPTION M63840P/FP/KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES ● High breakdown voltage （BVCEO≧ 4

文件：1.31464 Mbytes 页数：7 Pages

Mitsubishi

三菱电机

8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE

DESCRIPTION M63840P/FP/KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES ● High breakdown voltage （BVCEO≧ 4

文件：276.31 Kbytes 页数：6 Pages

Mitsubishi

三菱电机