首页 >M6008S>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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1關ASOT23PrecisionShuntVoltageReference GeneralDescription TheMAX6006–MAX6009ultra-low-powershuntreferencesareidealforspace-criticalandlow-powerapplications.Theyareofferedin3-pinSOT23packages,andtheminimumoperatingcurrentisguaranteedtobe Features ●Ultra-LowOperatingCurrent:Guaranteed | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
1關ASOT23PrecisionShuntVoltageReference GeneralDescription TheMAX6006–MAX6009ultra-low-powershuntreferencesareidealforspace-criticalandlow-powerapplications.Theyareofferedin3-pinSOT23packages,andtheminimumoperatingcurrentisguaranteedtobe Features ●Ultra-LowOperatingCurrent:Guaranteed | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
44G-portDin-RialLayer3GigabitManagedEthernetswitches | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
N-channelMOSFET600V,8A,0.75Ω Description TheN6008NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=0.75ΩMAX.(VGS=10V,ID=4.0A) •Lowinputcapacitance Ciss=2145pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±8. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NCEN-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
LCEN-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
8analoginputsat12or14bits,upto48kS/s | NI National Instruments Inc. | NI | ||
FastRecoveryRectifier,40A,200ns Description: TheNTE6006throughNTE6011arefastrecoverysiliconrectifiersinaDO5typepackagedesignedforspecialapplicationssuchasDCpowersupplies,inverters,converters,ultrasonicsystems,choppers,lowRFinterference,sonarpowersupplies,andfreewheelingdiodes.Acompletelin | NTE NTE Electronics | NTE | ||
60V,N-channelTrenchMOSFET description N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETtechnology •ElectroStaticDischarge(ESD) | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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