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M5M5256DVP-70G	文件：165.4 Kbytes Page：8 Pages	262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
M5M5256DVP-70GI	文件：165.4 Kbytes Page：8 Pages	262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
M5M5256DVP-70LL	文件：63.41 Kbytes Page：7 Pages	262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社	Mitsubishi
M5M5256DVP-70VLL	文件：62.57 Kbytes Page：7 Pages	262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社	Mitsubishi
M5M5256DVP-70VLL-I	文件：43.85 Kbytes Page：7 Pages	262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社	Mitsubishi
M5M5256DVP-70VLL-W	文件：47.02 Kbytes Page：7 Pages	262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社	Mitsubishi
M5M5256DVP-70VXL	文件：62.57 Kbytes Page：7 Pages	262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社	Mitsubishi
M5M5256DVP-70VXL-I	文件：43.85 Kbytes Page：7 Pages	262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社	Mitsubishi
M5M5256DVP-70XG	文件：165.4 Kbytes Page：8 Pages	262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
M5M5256DVP-70XL	文件：63.41 Kbytes Page：7 Pages	262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社	Mitsubishi

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