8 INPUT NAND GATE

DESCRIPTION The M54/74HC30 is a high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10

文件：234.2 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Rad-hard high speed 2 to 6 V CMOS logic series

文件：306.74 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RAD-HARD 8-INPUT NAND GATE

文件：115.48 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

抗辐照8输入与非门

The M54HCxxx and M54HCTxxx series is composed of CMOS functions, specifically designed to meet the radiation requirements of the aerospace industry. They include a large set of gates, flip-flops, multiplexers, counters, bus interface and several other functions. The radiation hardness, the single ev • ESCC qualified \n• 7 V Absolute maximum ratings \n• 2 V to 6 V operating voltage for CMOS M54HCxxx series \n• 4.5 V to 5.5 V operating voltage for TTL M54HCTxxx series \n• Hermetic packages \n• Rad-hard 50 krad (Si) TID \n• SEL immune up to 110 MeV.cm²/mg \n• -55 °C to +125 °C temperature range \n;

ST

意法半导体

8 INPUT NAND GATE

DESCRIPTION The M54/74HC30 is a high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10

文件：234.2 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

RAD-HARD 8-INPUT NAND GATE

文件：115.48 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

RAD-HARD 8-INPUT NAND GATE

文件：115.48 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Rad-hard high speed 2 to 6 V CMOS logic series

文件：306.74 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RAD-HARD 8-INPUT NAND GATE

文件：115.48 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

RAD-HARD 8-INPUT NAND GATE

文件：115.48 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体