M50FW040N1T中文资料意法半导体数据手册PDF规格书

SUMMARY DESCRIPTION

The M50FW040 is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast erasing in production lines an optional 12V power supply can be used to reduce the erasing time.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VCC = 3V to 3.6V for Program, Erase and Read Operations

– VPP = 12V for Fast Erase (optional)

■ TWO INTERFACES

– Firmware Hub (FWH) Interface for embedded operation with PC Chipsets.

– Address/Address Multiplexed (A/A Mux) Interface for programming equipment compatibility.

■ FIRMWARE HUB (FWH) HARDWARE INTERFACE MODE

– 5 Signal Communication Interface supporting Read and Write Operations

– Hardware Write Protect Pins for Block Protection

– Register Based Read and Write Protection

– 5 Additional General Purpose Inputs for platform design flexibility

– Synchronized with 33MHz PCI clock

■ PROGRAMMING TIME: 10µs typical

■ 8 UNIFORM 64 Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program and Block Erase algorithms

– Status Register Bits

■ PROGRAM and ERASE SUSPEND

– Read other Blocks during Program/Erase Suspend

– Program other Blocks during Erase Suspend

■ FOR USE in PC BIOS APPLICATIONS

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 2Ch