64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

文件：448.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

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64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

文件：448.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

文件：448.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

文件：448.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体