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M29W800T90N5R中文资料PDF规格书
M29W800T90N5R规格书详情
DESCRIPTION
The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
■ M29W800T and M29W800B are replaced respectively by the M29W800AT and M29W800AB
■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ FASTACCESS TIME: 90ns
■ FAST PROGRAMMING TIME
– 10µs by Byte / 20µs by Word typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
■ MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATARETENTION
– Defectivity below 1ppm/year ELECTRONIC SIGNATURE
– ManufacturerCode: 0020h
– Device Code, M29W800T: 00D7h
– Device Code, M29W800B: 005Bh
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
2017+ |
NA |
28562 |
只做原装正品假一赔十! |
询价 | ||
ST |
NA |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
NA |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
Mag-Lite |
22+ |
2500 |
原装现货 支持实单 |
询价 | |||
PAN |
17+ |
SOT-163 |
6200 |
100%原装正品现货 |
询价 | ||
SUNMATE(森美特) |
2019+ROHS |
DO-214AC |
66688 |
森美特高品质产品原装正品免费送样 |
询价 | ||
AD |
23+ |
SSOP-8P |
5000 |
原装正品,假一罚十 |
询价 | ||
ST |
03+ |
TSOP48 |
690 |
询价 | |||
PAN |
16+ |
SOT-163 |
10000 |
进口原装现货/价格优势! |
询价 | ||
PAN |
22+ |
SOT-163 |
25000 |
只有原装原装,支持BOM配单 |
询价 |