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M29W160

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:170.65 Kbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

M29W160

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

ST

意法半导体

M29W160BB

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:170.65 Kbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

M29W160BB120M1T

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:170.65 Kbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

M29W160BB120M6T

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:170.65 Kbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

M29W160BB120N1T

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:170.65 Kbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

M29W160BB120N6T

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:170.65 Kbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

M29W160BB120ZA1T

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:170.65 Kbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

M29W160BB120ZA6T

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:170.65 Kbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

M29W160BB70M1T

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:170.65 Kbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    16Mb (2M x 8,1M x 16)

  • 写周期时间 - 字,页:

    70ns

  • 访问时间:

    70ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    2.7V ~ 3.6V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    48-TFSOP(0.724\,18.40mm 宽)

  • 供应商器件封装:

    48-TSOP

供应商型号品牌批号封装库存备注价格
ST/意法
23+
TSOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ST
23+
原厂原封
16900
正规渠道,只有原装!
询价
ST
25+
原厂原封
16900
原装,请咨询
询价
ST
24+
BGA
3000
公司存货
询价
NUMONYX
1215+
TSSOP
150000
全新原装,绝对正品,公司大量现货供应.
询价
ST
23+
TSSOP
20000
原厂授权代理分销现货只做原装正迈科技样品支持现货
询价
Micron
13+
1990
原装分销
询价
ST
24+/25+
75
原装正品现货库存价优
询价
23040
24+
TSOP48
6980
原装现货,可开13%税票
询价
ST
04+
TSSOP
2890
全新原装进口自己库存优势
询价
更多M29W160供应商 更新时间2025-11-19 15:10:00