首页 >M29W004>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

M29W004

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-100N1TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-100N5TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-100N6TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-120N1TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-120N5TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-120N6TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-150N1TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-150N5TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-150N6TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-90N1TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-90N5TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004B-90N6TR

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004BB

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004BB120N1T

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004BB120N6T

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004BB55N1T

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W004BB55N6T

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

详细参数

  • 型号:

    M29W004

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

供应商型号品牌批号封装库存备注价格
ST
2017+
TSOP
24589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
3000
公司存货
询价
ST
22+
TSOP
3200
十年品牌!原装现货!!!
询价
SINGAPORE
16+
SMD
1980
原装现货假一罚十
询价
ST
22+
12
原装现货,可开13%税票
询价
ST
2020+
TSOP
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
STM
23+
TSSOP
8560
受权代理!全新原装现货特价热卖!
询价
ST
22+23+
TSSOP
23980
绝对原装正品现货,全新深圳原装进口现货
询价
ST
2019
TSOP
55000
专营原装正品现货
询价
ST
23+
TSOP
20000
原厂原装正品现货
询价
更多M29W004供应商 更新时间2024-4-28 14:31:00