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型号	下载订购	功能描述	制造商上传企业	LOGO
M29F002NT	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002NT-120K1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002NT-120K6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002NT-120N1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002NT-120N6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002NT-120P1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002NT-120P6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002NT-120XK1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002NT-120XK6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002NT-120XN1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

详细参数

型号：
M29F002NT
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	M29F002NT-120K1	ST	24+	PLCC-32	39		询价
深圳市安富世纪电子有限公司	M29F002NT-120K1	ST	23+	PLCC	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	M29F002NT-70PI	ST/意法	23+	DIP32	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市威雅利发展有限公司	M29F002NT-120K1	ST	1558+	PLCC	505	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
海芯未来半导体电子（深圳）有限公司	M29F002NT-120K1	ST	25+	PLCC	505	只做原装进口!正品支持实单!	询价
深圳市科翼源电子有限公司	M29F002NT-120K1	ST	23+	PLCC	3005	原厂原装正品	询价
深圳市晨豪科技有限公司	M29F002NT-120K1	ST/意法	23+	PLCC	89630	当天发货全新原装现货	询价
深圳市明嘉莱科技有限公司	M29F002NT-120K1	ST/意法	25+	PLCC	860000	明嘉莱只做原装正品现货	询价
深圳市富芯拓展电子有限公司	M29F002NT-120K1	ST	15+	PLCC	505	原装	询价
深圳市东来宝电子科技有限公司	M29F002NT-120K1	ST/意法	24+	PLCC	27950	郑重承诺只做原装进口现货	询价

更多M29F002NT供应商更新时间2025-12-1 15:30:00

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