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M28W320ECB

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10N1

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10N1E

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10N1F

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10N1T

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10N6

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10N6E

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10N6F

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10N6T

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10ZB1

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10ZB1E

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10ZB1F

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10ZB1T

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10ZB6

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10ZB6E

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10ZB6F

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB10ZB6T

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB70N1

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB70N1E

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W320ECB70N1F

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    M28W320ECB

  • 制造商:

    Micron Technology Inc

  • 功能描述:

    FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 70NS 47TFBGA - Trays

供应商型号品牌批号封装库存备注价格
ST
05+
PBGA
7
特价热销现货库存100%原装正品欢迎来电订购!
询价
ST
22+
BGA-M47P
2560
绝对原装!现货热卖!
询价
Numonyx-ADIVISIONOFMICRO
2022
ICFLASH32MBIT70NS47TFBGA
5058
原厂原装正品,价格超越代理
询价
ST
2017+
QFN
6528
只做原装正品现货!或订货假一赔十!
询价
ST
23+
NA
122
专做原装正品,假一罚百!
询价
ST
24+
BGA
90000
一级代理商进口原装现货、假一罚十价格合理
询价
ST
23+
QFN
20000
原厂原装正品现货
询价
Numonyx/STMi
23+
47-TFBGA
65480
询价
Micron Technology Inc.
21+
84-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
ST
2023+
QFN
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多M28W320ECB供应商 更新时间2024-9-22 9:06:00