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M25P10-AVMN6TPYA TR

包装:散装 封装/外壳:8-SOIC(0.154",3.90mm 宽) 类别:集成电路(IC) 存储器 描述:IC FLASH 1MBIT SPI 50MHZ 8SO

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

M25P10-AVMN6

1Mbit,LowVoltage,SerialFlashMemoryWith25MHzSPIBusInterface

Summarydescription TheM25P10-Aisa1Mbit(128Kx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,e

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6

512Kbitto32Mbit,LowVoltage,SerialFlashMemoryWith40MHzor50MHzSPIBusInterface

SUMMARYDESCRIPTION TheM25Pxxisa512Kbitto32Mbit(2Mx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■512Kbitto32MbitofFlashMemory ■PageProgram(upto256Bytes)in1.4ms(typical) ■SectorErase(2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6

1Mbit,lowvoltage,SerialFlashmemorywith50MHzSPIbusinterface

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6/X

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYXNUMONYX

恒忆

M25P10-AVMN6/Y

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYXNUMONYX

恒忆

M25P10-AVMN6G

1Mbit,LowVoltage,SerialFlashMemoryWith25MHzSPIBusInterface

Summarydescription TheM25P10-Aisa1Mbit(128Kx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,e

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6G

512Kbitto32Mbit,LowVoltage,SerialFlashMemoryWith40MHzor50MHzSPIBusInterface

SUMMARYDESCRIPTION TheM25Pxxisa512Kbitto32Mbit(2Mx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■512Kbitto32MbitofFlashMemory ■PageProgram(upto256Bytes)in1.4ms(typical) ■SectorErase(2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6G/X

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYXNUMONYX

恒忆

M25P10-AVMN6G/Y

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYXNUMONYX

恒忆

M25P10-AVMN6P

1Mbit,lowvoltage,SerialFlashmemorywith50MHzSPIbusinterface

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6P

512Kbitto32Mbit,LowVoltage,SerialFlashMemoryWith40MHzor50MHzSPIBusInterface

SUMMARYDESCRIPTION TheM25Pxxisa512Kbitto32Mbit(2Mx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■512Kbitto32MbitofFlashMemory ■PageProgram(upto256Bytes)in1.4ms(typical) ■SectorErase(2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6P

1Mbit,LowVoltage,SerialFlashMemoryWith25MHzSPIBusInterface

Summarydescription TheM25P10-Aisa1Mbit(128Kx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,e

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6P/X

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYXNUMONYX

恒忆

M25P10-AVMN6P/Y

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYXNUMONYX

恒忆

M25P10-AVMN6T

512Kbitto32Mbit,LowVoltage,SerialFlashMemoryWith40MHzor50MHzSPIBusInterface

SUMMARYDESCRIPTION TheM25Pxxisa512Kbitto32Mbit(2Mx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■512Kbitto32MbitofFlashMemory ■PageProgram(upto256Bytes)in1.4ms(typical) ■SectorErase(2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6T

512Kbit,LowVoltage,SerialFlashMemoryWith25MHzSPIBusInterface

SUMMARYDESCRIPTION TheM25Pxxisa512Kbitto32Mbit(2Mx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. FEATURESSUMMARY ■512Kbitto32MbitofFlashMemory ■PageProgram(upto256Bytes)in1.4ms(typical) ■SectorErase(2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6T

1Mbit,LowVoltage,SerialFlashMemoryWith25MHzSPIBusInterface

Summarydescription TheM25P10-Aisa1Mbit(128Kx8)SerialFlashMemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,e

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6T

1Mbit,lowvoltage,SerialFlashmemorywith50MHzSPIbusinterface

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M25P10-AVMN6T/X

1Mbit,serialFlashmemory,50MHzSPIbusinterface

Description TheM25P10-Aisa1Mbit(128Kbitx8)serialFlashmemory,withadvancedwriteprotectionmechanisms,accessedbyahighspeedSPI-compatiblebus. Thememorycanbeprogrammed1to256bytesatatime,usingthePagePrograminstruction. Thememoryisorganizedas4sectors,

NUMONYXNUMONYX

恒忆

产品属性

  • 产品编号:

    M25P10-AVMN6TPYA TR

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    散装

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    1Mb(128K x 8)

  • 存储器接口:

    SPI

  • 写周期时间 - 字,页:

    15ms,5ms

  • 电压 - 供电:

    2.3V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-SOIC(0.154",3.90mm 宽)

  • 供应商器件封装:

    8-SO

  • 描述:

    IC FLASH 1MBIT SPI 50MHZ 8SO

供应商型号品牌批号封装库存备注价格
Micron
22+
8SO
9000
原厂渠道,现货配单
询价
Micron
21+
8SO
13880
公司只售原装,支持实单
询价
Micron
21+
8SO
610880
本公司只售原装 支持实单
询价
Micron
20+
8SO
9000
询价
MicronTechnologyInc.
19+
8-SO
26580
存储IC一手货源,极具优势!
询价
Micron Technology Inc.
21+
8-SO
56200
一级代理/放心采购
询价
Micron
1942+
N/A
908
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MICRON
20+
SOP-8
1001
就找我吧!--邀您体验愉快问购元件!
询价
Micron
23+
8-SOIC
36500
原装正品现货库存QQ:2987726803
询价
Micron Technology Inc.
24+
8-SOIC(0.154,3.90mm 宽)
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
更多M25P10-AVMN6TPYA供应商 更新时间2024-5-25 14:35:00