首页 >M1N60C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFET600V,0.4A | RECTRON Rectron Semiconductor | RECTRON | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
FULLYISOLATEDTMOSE-FETPOWERFIELDEFFECTTRANSISTOR
| MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
TMOSPOWERFET1.0AMPERE600VOLTSRDS(on)=8.0OHM TMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerFieldEffectTransisterN-ChannelEnhancementModeSiliconGate PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSpeeds—SwitchingTimesSpecif | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
N-ChannelMosfetTransistor •DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent-ID=1A@TC=25°C •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=8Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirements | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
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