600 V, 8 A X-Series PFC Diode

General Description This device has the lowest QRR of any 600V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Features • Low QRR, Low IRRM, Low tRR • High dIF/dt capable (1000A/µs) • Soft recovery • FullPak Insulation = 2500VRMS Benefits

文件：246.24 Kbytes 页数：10 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

600 V, 8 A X-Series PFC Diode

General Description This device has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications · Power Factor Correction (PFC) boost diode · Motor drive circuits · DC-AC inverters Features · Low QRR, low IR

文件：490.34 Kbytes 页数：8 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

快速硅二极管，在EMI性能与开关速度之间实现平衡VRRM     - 600 VIF(AVG)   - 3 A - 20 AQRR       - 21 nC - 51 nC

Qspeed™二极管在所有硅二极管中具有最低的QRR值。其恢复特性能提高效率、降低EMI并省去缓冲电路。 特性\r\n·低QRR、低IRRM、低tRR\r\n·可实现高dIF/dt值(1000A/µs)\r\n·软恢复\r\n\r\n优势\r\n·提高效率\r\n·无需缓冲电路\r\n·缩减EMI滤波元件的尺寸和数目\r\n·实现极快速开关;

PI

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 8A TO263AB

Power Integrations