首页 >LT726>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SchottkyBarrierDiodes(SBD) Siliconepitaxialplanartype Forsuperhighspeedswitching Forsmallcurrentrectification ■Features •Twoisolatedelementsarecontainedinonepackage,allowinghigh-densitymounting •TwoMA3X721(MA721)iscontainedinonepackage(twodiodesinadifferentdirection) •IF(AV)=200 | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
Switch-ModeBatteryChargerDelivers5A Switch-ModeBatteryChargerDelivers5A Thefast-chargecontrollerIC3(Figure1)normallydirectscurrenttothebatteryviaanexternalpnptransistor.Inthiscircuit,thetransistorisreplacedwitha5Aswitchingregulator(IC1)thatdeliversequivalentpowerwithhigherefficiency. IC1is | DallasDallas Semiconductor 亚德诺亚德诺半导体 | Dallas | ||
5V/3.3V/3V5AStep-Down,PWM,Switch-ModeDC-DCRegulators GeneralDescription TheMAX787/MAX788/MAX789aremonolithic,bipolar,pulse-widthmodulation(PWM),switch-mode,step-downDC-DCregulators.Eachisratedat5A.Veryfewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscillator,feedback,andcontrolcircuitryar | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
5A/2AStep-Down,PWM,Switch-ModeDC-DCRegulators GeneralDescription TheMAX724/MAX726aremonolithic,bipolar,pulsewidthmodulation(PWM),switch-modeDC-DCregulatorsoptimizedforstep-downapplications.TheMAX724isratedat5A,andtheMAX726at2A.Fewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscil | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
5A/2AStep-Down,PWM,Switch-ModeDC-DCRegulators GeneralDescription TheMAX724/MAX726aremonolithic,bipolar,pulsewidthmodulation(PWM),switch-modeDC-DCregulatorsoptimizedforstep-downapplications.TheMAX724isratedat5A,andtheMAX726at2A.Fewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscil | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
1472MHzBPFforDAB | SOSHINSoshin electric Co., Ltd. 双信电机双信电机株式会社 | SOSHIN | ||
PackageSOP8 | ZMD Zentrum Mikroelektronik Dresden AG | ZMD | ||
3WATTGLASSZENERDIODES FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance. | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
IntegratedCircuitWideBandAmplifier Features: •ExceptionallyHighAmplifierGain:PowerGainat4.5MHz/s–75dB(Typ) •ExcellentLimitingCharacteristics:InputLimitingVoltage(Knee)=600µV(Typ)at10.7MHz/s •WideFrequencyCapability:100kHz/sto>20MHz/s | NTE NTE Electronics | NTE | ||
VeryLowNoise,High-Speed,12VCMOSOperationalAmplifier | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 |
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