5540

ABLEITSTROM-MESSGER횆TE

APT5540AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

APT5540BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

LTC5540

0.6GHzto1.3GHzHighDynamicRangeDownconvertingMixer

LTC5540

40MHzto10GHzRMSPowerDetectorwith57dBDynamicRange

FEATURES nFrequencyRange:40MHzto10GHz nLinearDynamicRange:Upto57dB nAccurateRMSPowerMeasurementofHighCrest FactorModulatedWaveforms nExceptionalAccuracyOverTemperature:±0.5dB(Typ) nLowLinearityErrorwithinDynamicRange nSingle-EndedorDifferentialRFInputs

LX5540

Co-Package2.3-2.5GHzHBTPowerAmplifier&pHEMTLowNoiseAmplifier

DESCRIPTION LX5540isaco-packageRFICconsistingofanInGaP/GaAsHeterojunctionBipolarTransistor(HBT)poweramplifierandaInGaAsEnhancementmodepseudomorphicHEMT(E-pHEMT)lownoiseamplifier.Bothareoptimizedfor WLANapplicationsinthe2.3-2.5GHzfrequencyrange.ThePAisi