首页 >LT3946>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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1.0625Gbpsto11.3Gbps,SFPLaserDriverwithLaserImpedanceMismatchTolerance GeneralDescription TheMAX3946isa+3.3V,multirate,low-powerlaserdiodedriverdesignedforEthernetandFibreChanneltransmissionsystemsatdataratesupto11.3Gbps.Thisdeviceisoptimizedtodriveadifferentialtransmitteropticalsubassembly(TOSA)witha25Iflexcircuit.Theuniqu | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
1Gbpsto11.3Gbps,SFPLaserDriverwithLaserImpedanceMismatchTolerance | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
1Gbpsto11.3Gbps,SFPLaserDriverwithLaserImpedanceMismatchTolerance | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
1.0625Gbpsto11.3Gbps,SFPLaserDriverwithLaserImpedanceMismatchTolerance GeneralDescription TheMAX3946isa+3.3V,multirate,low-powerlaserdiodedriverdesignedforEthernetandFibreChanneltransmissionsystemsatdataratesupto11.3Gbps.Thisdeviceisoptimizedtodriveadifferentialtransmitteropticalsubassembly(TOSA)witha25Iflexcircuit.Theuniqu | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
SWITCHINGTRANSISTORSDUALGENERALPURPOSETRANSISTORS DESCRIPTION The MBT3946Ddeviceisaspinoffofourpopular SOT23/SOT323threeleadeddevice.Itis designedforgeneralpurposeamplifierapplications andishousedintheSOT363sixleadedsurface mountpackage.Byputtingtwodiscretedevicesin onepackage,thisdeviceisidealfo | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
DualGeneralPurposeTransistorNPNPNPSilicon | WEITRON Weitron Technology | WEITRON | ||
DualGeneralPurposeTransistor | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
SWITCHINGTRANSISTORSDUALGENERALPURPOSETRANSISTORS DESCRIPTION The MBT3946Ddeviceisaspinoffofourpopular SOT23/SOT323threeleadeddevice.Itis designedforgeneralpurposeamplifierapplications andishousedintheSOT363sixleadedsurface mountpackage.Byputtingtwodiscretedevicesin onepackage,thisdeviceisidealfo | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
DualN-Channel20V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
SOT-363Plastic-EncapsulateTransistors FEATURES eComplementaryPair eOne3904-TypeNPN One3906-TypePNP eEpitaxialPlanarDieConstruction e|dealforLowPowerAmplificationandSwitching | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
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