Dual N -Channel Enhancement Power MOSFET

The LPM9022 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9022 is Pb-free and Halog · Trench Technology\n· Single NMOS: VDS=20V, ID=6A\n·RDS(ON) < 26mΩ @ VGS=2.5V\n·RDS(ON) < 20mΩ @ VGS=4.5V\n· Super high density cell design\n· Extremely Low Threshold Voltage\n· Small package DFN-6L 2*3mm;

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Dual N -Channel Enhancement Power MOSFET

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