N-Channel Enhancement Mode Field Effect Transistor

The LPM9014 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications 20V/4.2A, RDC(ON)＜50mΩ(typ.)@VGS=4.5V 20V/3.9A, RDC(ON)＜63mΩ(typ.)@VGS=2.5V20V/3.0A, RDC(ON)＜87mΩ(typ.)@VGS=1.8VSuper high density cell design for extremely low RDC(ON)SOT23 Package;

LPSemi

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N-Channel Enhancement Mode Field Effect Transistor

文件：159.5 Kbytes 页数：3 Pages

POWER

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PRE-AMPLIFIER, LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR

FEATURES * High Total Power Dissipation. (450mW) * Excellent hFE Linearity. * Complementary to UTC MMBT9015

文件：102.84 Kbytes 页数：2 Pages

UTC

友顺

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended.

文件：187.73 Kbytes 页数：2 Pages

SEMTECH_ELEC

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For switching and AF amplifier applications

NPN Silicon Epitaxial Planar Transistors For switching and AF amplifier applications As complementary types the PNP transistors MMBT9015 is recommended.

文件：312.63 Kbytes 页数：2 Pages

KINGTRONICS

京创国际