丝印：LPC660AIM；Package：SOIC；LPC660 Low Power CMOS Quad Operational Amplifier

1FEATURES 2• Rail-to-rail output swing • Micropower operation: (1 mW) • Specified for 100 kΩ and 5 kΩ loads • High voltage gain: 120 dB • Low input offset voltage: 3 mV • Low offset voltage drift: 1.3 μV/°C • Ultra low input bias current: 2 fA • Input common-mode includes V− • Operation r

文件：1.026 Mbytes 页数：27 Pages

TI

德州仪器

丝印：LPC660AIM；Package：SOIC；LPC660 Low Power CMOS Quad Operational Amplifier

1FEATURES 2• Rail-to-rail output swing • Micropower operation: (1 mW) • Specified for 100 kΩ and 5 kΩ loads • High voltage gain: 120 dB • Low input offset voltage: 3 mV • Low offset voltage drift: 1.3 μV/°C • Ultra low input bias current: 2 fA • Input common-mode includes V− • Operation r

文件：1.026 Mbytes 页数：27 Pages

TI

德州仪器

丝印：LPC660AIM；Package：SOIC；LPC660 Low Power CMOS Quad Operational Amplifier

1FEATURES 2• Rail-to-rail output swing • Micropower operation: (1 mW) • Specified for 100 kΩ and 5 kΩ loads • High voltage gain: 120 dB • Low input offset voltage: 3 mV • Low offset voltage drift: 1.3 μV/°C • Ultra low input bias current: 2 fA • Input common-mode includes V− • Operation r

文件：1.026 Mbytes 页数：27 Pages

TI

德州仪器

LPC660 Low Power CMOS Quad Operational Amplifier

文件：1.32785 Mbytes 页数：24 Pages

TI

德州仪器

LPC660 Low Power CMOS Quad Operational Amplifier

文件：1.32785 Mbytes 页数：24 Pages

TI

德州仪器