VERTICAL CLIPLITE 4MM LITEPIPE

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VCC

Visual Communications Company

HIGH PERFORMANCE PHEMT

DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimiz

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FILTRONIC

HIGH PERFORMANCE PHEMT

DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structu

文件：68.94 Kbytes 页数：2 Pages

FILTRONIC

LPE200BMB series

文件：613.98 Kbytes 页数：1 Pages

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