VERTICAL CLIPLITE 4MM LITEPIPE

文件：78.11 Kbytes 页数：1 Pages

VCC

HIGH PERFORMANCE PHEMT

DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimiz

文件：30.4 Kbytes 页数：2 Pages

FILTRONIC

HIGH PERFORMANCE PHEMT

DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structu

文件：68.94 Kbytes 页数：2 Pages

FILTRONIC

LPE200BMB series

文件：613.98 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商