LMG3622_V01中文资料德州仪器数据手册PDF规格书

1 Features

• 650-V 120-mΩ GaN power FET

• Integrated gate driver with low propagation delays

and adjustable turn-on slew-rate control

• Current-sense emulation with high bandwidth and

high accuracy

• Cycle-by-cycle overcurrent protection

• Overtemperature protection with FLT pin reporting

• AUX quiescent current: 240 μA

• AUX standby quiescent current: 50 μA

• Maximum supply and input logic pin voltage: 26 V

• 8 mm × 5.3 mm QFN package with thermal pad

2 Applications

• AC/DC adapters and chargers

• AC/DC USB wall outlet power supplies

• AC/DC auxiliary power supplies

• Mobile wall charger design

• USB wall power outlet

• Auxiliary-power supplies

3 Description

The LMG3622 is a 650-V 120-mΩ GaN power FET

intended for switch-mode power-supply applications.

The LMG3622 simplifies design and reduces

component count by integrating the GaN FET and

gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and

ringing control. The current-sense emulation reduces

power dissipation compared to the traditional currentsense

resistor and allows the low-side thermal pad to

be connected to the cooling PCB power ground.

The LMG3622 supports converter light-load efficiency

requirements and burst-mode operation with low

quiescent currents and fast start-up times. Protection

features include under-voltage lockout (UVLO), cycleby-

cycle current limit, and overtemperature protection.

Overtemperature protection is reported with the opendrain

FLT pin.