LM5104SD/NOPB.B中文资料德州仪器数据手册PDF规格书

1 Features

1• Drives Both a High-Side and Low-Side N-Channel

MOSFET

• Adaptive Rising and Falling Edges With

Programmable Additional Delay

• Single Input Control

• Bootstrap Supply Voltage Range up to 118-V DC

• Fast Turnoff Propagation Delay (25 ns Typical)

• Drives 1000-pF Loads With 15-ns Rise and Fall

Times

• Supply Rail Undervoltage Lockout

• SOIC and WSON-10 4-mm × 4-mm Package

2 Applications

• Current Fed Push-Pull Power Converters

• High Voltage Buck Regulators

• Active Clamp Forward Power Converters

• Half-Bridge and Full-Bridge Converters

3 Description

The LM5104 High-Voltage Gate Driver is designed to

drive both the high-side and the low-side N-channel

MOSFETs in a synchronous buck configuration. The

floating high-side driver can work with supply voltages

up to 100 V. The high-side and low-side gate drivers

are controlled from a single input. Each change in

state is controlled in an adaptive manner to prevent

shoot-through issues. In addition to the adaptive

transition timing, an additional delay time can be

added, proportional to an external setting resistor. An

integrated high-voltage diode is provided to charge

high-side gate drive bootstrap capacitor. A robust

level shifter operates at high speed while consuming low power and providing clean level transitions from

the control logic to the high-side gate driver.

Undervoltage lockout is provided on both the low-side

and the high-side power rails. This device is available

in the standard SOIC and the WSON packages.