LM358DT

LowPowerDualOperationalAmplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedop-ampswhicharedesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage.

LM358DT

SILICONMONNOLITHICINTEGRATEDCIRCUIT

Description TheUniversalStandardfamilyLM358/324,LM2904/2902monolithicICsintegratetwoindependentop-ampsandphasecompensationcapacitorsonasinglechip andfeaturehigh-gain,lowpowerconsumption,andanoperatingvoltagerangeof3[V]to32[V](singlepowersupply.) Features

LM358DT

Lowpowerdualoperationalamplifiers

LM358DT

Lowpowerdualoperationalamplifiers

LM358DT

SIGNATURESERIESOperationalAmplifiers

LM358DT

Low-powerdualoperationalamplifiers

Features Frequencycompensationimplementedinternally LargeDCvoltagegain:100dB Widebandwidth(unitygain):1.1MHz(temperaturecompensated) Verylowsupplycurrentperchannelessentiallyindependentofsupplyvoltage Lowinputbiascurrent:20nA(temperaturecompensated) Lowinput

LM358DT

LowPowerDualOperationalAmplifiers

■Internallyfrequencycompensated ■LargeDCvoltagegain:100dB ■Widebandwidth(unitygain):1.1mHz (temperaturecompensated) ■Verylowsupplycurrent/op(500μA)essentially independentofsupplyvoltage ■Lowinputbiascurrent:20nA (temperaturecompensated) ■Lowinputoffsetvolta

LM358E

SingleSupplyDualOperationalAmplifiers

UtilizingthecircuitdesignsperfectedforQuadOperational Amplifiers,thesedualoperationalamplifiersfeaturelowpowerdrain, acommonmodeinputvoltagerangeextendingtoground/VEE,and singlesupplyorsplitsupplyoperation.TheLM358seriesis equivalenttoone−halfofanLM324. T

LM358F

BIPOLARLINEARINTEGRATEDCIRCUIT

LM358F

GroundSenseOperationalAmplifiers