LLE18150X中文资料飞利浦数据手册PDF规格书

厂商型号	LLE18150X
功能描述	NPN silicon planar epitaxial microwave power transistor
文件大小	52 Kbytes
页面数量	9 页
生产厂商	Philips Semiconductors
企业简称	PHI【飞利浦】
中文名称	荷兰皇家飞利浦
数据手册	下载地址一下载地址二
更新时间	2025-7-25 15:41:00
人工找货	LLE18150X价格和库存，欢迎联系客服免费人工找货

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a FO-229 glued cap metal ceramic flange package, with emitter connected to flange.

FEATURES

• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

• Interdigitated structure provides high emitter efficiency

• Gold metallization realizes very good stability of the characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated power and low thermal resistance

• Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

APPLICATION

Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.7 GHz and 2.0 GHz.