NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metalliz

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PHI

飞利浦

Built-in Gain IC?셲 for High Sensitivity 2-Wire Microphones

文件：698.18 Kbytes 页数：11 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LMV1015 Analog Series: Built-in Gain ICs for High Sensitivity 2-Wire Microphones

文件：845.29 Kbytes 页数：14 Pages

TI

德州仪器

LMV1015 Analog Series: Built-in Gain ICs for High Sensitivity 2-Wire Microphones

1FEATURES 2• (Typical LMV1015-15, 2.2V supply, RL = 2.2 kΩ, C = 2.2 μF, V IN = 18 mVPP, unless otherwise specified) • Supply Voltage: 2V - 5V • Supply Current:

文件：457.77 Kbytes 页数：16 Pages

TI

德州仪器