4 MEG (524288 words x 8 bits) Flash Memory

Overview The LE28F4001 Series ICs are 524288-word × 8-bit flash memory products that support on-board reprogramming and feature 5 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. These products support a sector (256 bytes

文件：219.23 Kbytes 页数：14 Pages

SANYO

三洋

4 MEG (524288 words x 8 bits) Flash Memory

ONSEMI

安森美半导体

4 MEG (524288 words × 8 bits) Flash Memory

Overview\nThe LE28F4001 Series ICs are 524288-word × 8-bit flash memory products that support on-board reprogramming and feature 5 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. These products support a sector (256 bytes) er • Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.\n• Read and write operation from a 5 V single-voltage power supply\n• Sector erase function: 256 bytes per sector\n• Fast access time: 150/200 ns\n• Low power\n   — Operating current (read): 25 mA (maximum)\n   — Standb;

ONSEMI

安森美半导体

4 MEG (524288 words x 8 bits) Flash Memory

Overview The LE28F4001 Series ICs are 524288-word × 8-bit flash memory products that support on-board reprogramming and feature 5 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. These products support a sector (256 bytes

文件：219.23 Kbytes 页数：14 Pages

SANYO

三洋

4 MEG (524288 words x 8 bits) Flash Memory

Overview The LE28F4001 Series ICs are 524288-word × 8-bit flash memory products that support on-board reprogramming and feature 5 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. These products support a sector (256 bytes

文件：219.23 Kbytes 页数：14 Pages

SANYO

三洋