LCE60P04R

丝印：NCE60P04R；Package：SOT-223-3L；P-Channel Enhancement Mode Power MOSFET

LCE60P04R

MOSFET场效应管;

LCE60P04SN

LCEP-ChannelEnhancementModePowerMOSFET

LCE60P04Y

LCEP-ChannelEnhancementModePowerMOSFET

NCE60P04

P-Channel60-V(D-S)MOSFET

FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •P-Channel •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable

NCE60P04R

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P04Rusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications.GeneralFeatures ●VDS=-60V,ID=-4.3A RDS(ON)

NCE60P04SN

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P04SNusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-4A RDS(ON)

NCE60P04Y

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P04Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-4A RDS(ON)

NCE60P04Y

P-Channel60-V(D-S)MOSFET

FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •P-Channel •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable

PJD60P04E-AU

40VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-20A