SCHOTTKY BARRIER DIODE Low forward current

DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection.Single diodes and double diodes with different pinning are available. We declare that the material of product compliance with RoHS requirements. Features ● Low forward current ● High breakdown volta

文件：66.24 Kbytes 页数：4 Pages

LRC

乐山无线电

General Purpose Transistors PNP Silicon

文件：344.26 Kbytes 页数：7 Pages

LRC

乐山无线电

Dual Switching Diode Common Cathode

Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：94.44 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Dual Switching Diode Common Cathode

文件：52.62 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Dual Switching Diode Common Cathode

Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：94.44 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Dual Switching Diode Common Cathode

Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：130.1 Kbytes 页数：4 Pages

ONSEMI

安森美半导体