零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MoldedAxialInductor | BournsBourns Inc. 伯恩斯(邦士) | Bourns | ||
DualAnalog-to-DigitalConverter | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
14-Bit,170MSPS/250MSPS,JESD204B,DualAnalog-to-DigitalConverter GENERALDESCRIPTION TheAD9250isadual,14-bitADCwithsamplingspeedsofupto250MSPS.TheAD9250isdesignedtosupportcommunicationsapplicationswherelowcost,smallsize,widebandwidth,andversatilityaredesired. FEATURES JESD204BSubclass0orSubclass1codedserialdigital | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
HIGHSENSITIVITYMICROPOWEROMNIPOLARHALL-EFFECTSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGHSENSITIVITYMICROPOWEROMNIPOLARHALL-EFFECTSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DigitalRGB,IRandAmbientLightSensor | AVAGOAvago 安华高安华高科技 | AVAGO | ||
DigitalRGB,IRandAmbientLightSensor | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
VoltageControlledOscillator | APITECH API Technologies Corp | APITECH | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
15A,-200V,0.290Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
15A,-200V,0.290Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5V/1550nm/2.5Gb/sSignle-ModeGigabitInterfaceConverter(GBIC) | OPTOWAYOptoway Technology Inc 奥普薇科技奥普薇科技股份有限公司 | OPTOWAY | ||
TRANSISTORP-CHANNEL(BVdss=-200V,Rds(on)=0.315ohm,Id=-14A) InternationalRectifier’sRADHardHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffects | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Microchip Technology |
20+21+ |
Tray |
8880 |
十年老店,原装正品 |
询价 | ||
Microchip |
23+ |
64QFN |
10000 |
原厂原装正品现货 |
询价 | ||
Microchip Technology |
21+ |
64-QFN(9x9) |
53620 |
一级代理/放心采购 |
询价 | ||
Microchip |
1940+ |
N/A |
808 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
MICROCHIP/微芯 |
20+ |
QFN-64 |
5000 |
支持实单/原盒/原包/原标/进口原装 |
询价 | ||
MICROCHIP/微芯 |
23+ |
64QFN |
35200 |
只做原装主打品牌QQ询价有询必回 |
询价 | ||
MICROCHIP(美国微芯) |
2112+ |
QFN-64 |
31500 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
MICROCHIP |
20+ |
QFN-64 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Microchip Technology |
21+ |
64-VFQFN 裸露焊盘 |
9000 |
正规渠道/品质保证/原装正品现货 |
询价 | ||
Microchip |
22+ |
NA |
1899 |
加我QQ或微信咨询更多详细信息, |
询价 |
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