首页 >L6506DCTR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PIRSENSORINTERFACE | LSI LSI Computer Systems | LSI | ||
DualTripSOTTemperatureSwitches | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
DualTripSOTTemperatureSwitchesNoExternalComponentsRequired | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
2.7V-to-15V,500mA,BipolarStepper-MotorDriverwithIntegratedMOSFETs | MPSMonolithic Power Systems Inc. 美国芯源美国芯源系统有限公司 | MPS | ||
2.7V-to-15V,500mA,BipolarStepper-MotorDriverwithIntegratedMOSFETs | MPSMonolithic Power Systems Inc. 美国芯源美国芯源系统有限公司 | MPS | ||
N-channelMOSFET650V,7.5A,1.3 Description TheN6506NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Lowon-stateresistance RDS(on)=1.3MAX.(VGS=10V,ID=3.75A) Lowinputcapacitance Ciss=1385pFTYP.(VDS=10V,VGS=0V) Highcurrent ID(DC)=±7. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NECs1550nmInGaAsPMQW-DFBLASERDIODEINCANPACKAGEFOR622Mb/sAND1.25Gb/sAPPLICATIONS | CEL California Eastern Labs | CEL | ||
LASERDIODE 1550nmInGaAsPMQW-DFBLASERDIODE FOR622Mb/s,1.25Gb/s DESCRIPTION TheNX6506Seriesisa1550nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. APPLICATIONS •STM-1,STM-4,ITU-Trecommendations •FTTHPON(FiberToTheHo | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
LASERDIODE 1550nmInGaAsPMQW-DFBLASERDIODE FOR622Mb/s,1.25Gb/s DESCRIPTION TheNX6506Seriesisa1550nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. APPLICATIONS •STM-1,STM-4,ITU-Trecommendations •FTTHPON(FiberToTheHo | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NECs1550nmInGaAsPMQW-DFBLASERDIODEINCANPACKAGEFOR622Mb/sAND1.25Gb/sAPPLICATIONS | CEL California Eastern Labs | CEL |
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