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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
L-11013	文件：26.47 Kbytes Page：1 Pages	CURRENT SENSE INDUCTORS	RHOMBUS-IND Rhombus Industries Inc.	RHOMBUS-IND
11013	文件：401.4 Kbytes Page：1 Pages	TESTJACKS	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
11013-R	文件：401.4 Kbytes Page：1 Pages	TESTJACKS	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
AC11013	文件：132.2 Kbytes Page：5 Pages	DUAL4INPUTNANDSCHMITTTRIGGER DESCRIPTION The74AC/ACT11013high-performanceCMOSdevicescombineveryhighspeedandhighoutputdrivecomparabletothemostadvancedTTLfamilies.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
ACE11013A	文件：348.55 Kbytes Page：7 Pages	P-ChannelEnhancementModeMOSFET	ACE ACE Technology Co., LTD.	ACE
ACT11013	文件：132.2 Kbytes Page：5 Pages	DUAL4INPUTNANDSCHMITTTRIGGER DESCRIPTION The74AC/ACT11013high-performanceCMOSdevicescombineveryhighspeedandhighoutputdrivecomparabletothemostadvancedTTLfamilies.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
MJ11013	文件：54.14 Kbytes Page：1 Pages	PowerTransistors PowerTransistors TO-3Case(Continued)	CentralCentral Semiconductor Corp 美国中央半导体	Central
MJ11013	文件：96.68 Kbytes Page：2 Pages	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: HighGainDarlingtonPerformance HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
MJ11013	文件：140.07 Kbytes Page：3 Pages	POWERTRANSISTORS(30A,60-120V,200W) COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGainhFE=1000(Min)@IC=20A •MonolithicConstructionwithBuilt−inBaseEmitterShun	MOSPEC MOSPEC	MOSPEC
MJ11013	文件：157.15 Kbytes Page：4 Pages	30AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.120VOLTS200WATTS High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain-hFE=1000(Min)@IC−20Adc •MonolithicConstructionwithBuilt−inBaseEmitterShuntResistor •JunctionTemperatureto+200C	MotorolaMotorola, Inc 摩托罗拉	Motorola
MJ11013	文件：21.75 Kbytes Page：1 Pages	PNPSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS) PNPSILICONDARLINGTONTRANSISTOR SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS	WINGSWing Shing Computer Components Wing Shing Computer Components	WINGS
MJ11013	文件：157.15 Kbytes Page：4 Pages	DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC–20Adc •MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor •JunctionTemperatureto+200°C	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJ11013	文件：53.51 Kbytes Page：2 Pages	iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-90V(Min.) •HighDCCurrentGain-:hFE=1000(Min.)@IC=-20A •LowCollectorSaturationVoltage-:VCE(sat)=-3.0V(Max.)@IC=-20A •ComplementtoTypeMJ11014 APPLICATIONS •Designedforuseasoutputdevicesincomplementary	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MJ11013	文件：15.53 Kbytes Page：1 Pages	BipolarPNPDeviceinaHermeticallysealedTO3	SEME-LAB Seme LAB	SEME-LAB
PS11013	文件：407.36 Kbytes Page：6 Pages	FLAT-BASETYPEINSULATEDTYPE INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCON	POWEREX POWEREX	POWEREX
PS11013	文件：254.53 Kbytes Page：3 Pages	PatchLead-CAT5E PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
PS11013	文件：414.27 Kbytes Page：6 Pages	ApplicationSpecificIntelligentPowerModuleFLAT-BASETYPEINSULATEDPACKAGE INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCON	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi

详细参数

型号：
L-11013
制造商：
RHOMBUS-IND
制造商全称：
Rhombus Industries Inc.
功能描述：
CURRENT SENSE INDUCTORS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市维尔达电子有限公司	L1101-44	AUO	2023+	QFN	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市华斯顿科技有限公司	L1101CN8	LINEAR	22+23+	N/A	23452	绝对原装正品现货,全新深圳原装进口现货	询价
贸泽芯城（深圳）电子科技有限公司	L1101CN8	LINEAR/凌特		NA	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市莱克讯科技有限公司	L1103	新电元	2017+	TO263	35689	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市科恒伟业电子有限公司	L1103	新电元	2018+	TO263	6528	只做原装正品假一赔十!只要网上有上百分百有库存放心	询价
深圳市百视威讯电子科技有限公司	L1103		23+	N/A	36100	正品授权货源可靠	询价
深圳市赛恒电子科技有限公司	L11034	HAMAMATSU	2020+	SIP	3241	原装正品公司现货价格优惠	询价
深圳市晨豪科技有限公司	L11045	N/A	23+	QFP	89630	当天发货全新原装现货	询价
深圳市航宇科工半导体有限公司	L110-45°	NANYA(南亚)	21+	-	35000	航宇科工半导体-央企合格优秀供方	询价
深圳市九方航科技有限公司	L1104S	VBSEMI	19+	DPAK	29600	绝对原装现货,价格优势!	询价

更多L-11013供应商更新时间2024-4-28 13:30:00

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